simple drive requirement bv dss -60v small package outline r ds(on) 250m surface mount device i d - 1.8a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a thermal resistance junction-ambient 3 max. 90 /w AP2311GN rating - 60 20 - 1.8 0.01 continuous drain current 3 - 1.4 pulsed drain current 1,2 -10 parameter drain-source voltage gate-source voltage continuous drain current 3 total power dissipation operating junction temperature range storage temperature range 1.38 -55 to 150 -55 to 150 linear derating factor thermal data parameter the advanced power mosfets from ty provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. the sot-23 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s d g s sot-23 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
AP2311GN electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -60 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.04 - v/ r ds(on) static drain-source on-resistance v gs =-10v, i d =-1.8a - 200 250 m v gs =-4.5v, i d =-1.4a - 240 300 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-1a - 2 - s i dss drain-source leakage current (t j =25 o c) v ds =-60v, v gs =0v - - -10 ua drain-source leakage current (t j =70 o c) v ds =-48v, v gs =0v - - -25 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =-1a - 6 10 nc q gs gate-source charge v ds =-48v - 1 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 3 - nc t d(on) turn-on delay time 2 v ds =-30v - 8 - ns t r rise time i d =-1a - 5 - ns t d(off) turn-off delay time r g =3.3 , v gs =-10v - 22 - ns t f fall time r d =30 -3- ns c iss input capacitance v gs =0v - 510 810 pf c oss output capacitance v ds =-25v - 50 - pf c rss reverse transfer capacitance f=1.0mhz - 40 - pf r g gate resistance f=1.0mhz - 6.4 9.6 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.2a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-1a, v gs =0v, - 30 - ns q rr reverse recovery charge di/dt=100a/s - 38 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. min. copper pad. 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 270 /w when mounted on product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
|
